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• W2009797744 abstract "Dry etch behavior of CoNbZr in an inductively coupled plasma of Cl2/BCl3 at elevated temperatures has been studied. Etch behavior of the alloy is ion induced with a strong chemical enhancement. The etch rate shows nonstoichiometric behavior when compared with the constituting elements. The increase by about 35% is attributed to interactive effects. A further enhancement up to about 40% is obtained under simultaneous exposure of deep ultraviolet irradiation. A fast anisotropic dry patterning process for CoNbZr has been developed, with etch rates up to 300 nm/min at 220 °C." @default.
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• W2009797744 date "2000-11-01" @default.
• W2009797744 modified "2023-10-16" @default.
• W2009797744 title "High speed anisotropic dry etching of CoNbZr for next generation magnetic recording" @default.
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• W2009797744 doi "https://doi.org/10.1116/1.1313577" @default.
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