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- W2009867019 abstract "Dislocations concentration in 2–3 cm diameter silicon single crystals was investigated using the etch-pit-count technique. The large concentration of etch pits at the peripheries of the etched wafers is explained by spontaneous generation of dislocations during the growth of the crystals." @default.
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- W2009867019 date "1968-08-01" @default.
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- W2009867019 title "Spontaneous generation of dislocations during growth of silicon single crystals" @default.
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- W2009867019 doi "https://doi.org/10.1016/0022-0248(68)90009-2" @default.
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