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- W2009899487 abstract "Carbon-doped In x Ga 1- x As layers ( x =0∼0.96) were grown by metalorganic molecular beam epitaxy (MOMBE) using trimethylgallium (TMG), solid arsenic (As 4 ) and solid indium (In) as sources of Ga, As and In, respectively. The growth temperature and the indium beam flux strongly affect carrier concentration, and the growth temperature also affects the indium molar fraction of the In x Ga 1- x As layers grown even with the fixed indium beam flux. The hole concentration decreases with increasing indium molar fraction from 0 to 0.8, and then the conduction type changes from the p to n type at x =0.8. Hole concentrations of 1.0×10 19 and 1.2×10 18 cm -3 are obtained for x =0.3 and 0.54, respectively. These values are significantly higher than those reported for carbon-doped In x Ga 1- x As by MBE." @default.
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- W2009899487 date "1991-09-01" @default.
- W2009899487 modified "2023-10-16" @default.
- W2009899487 title "P-Type Carbon-Doped InGaAs Grown by Metalorganic Molecular Beam Epitaxy" @default.
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- W2009899487 doi "https://doi.org/10.1143/jjap.30.l1609" @default.
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