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- W2009943423 abstract "The electrical performance of 4H-SiC Power MOSFETs is studied at temperatures from 93K to 473K. With the decrease of operation temperature, the threshold voltage is found to increase linearly whereas the on-resistance shows a minimum value within the whole temperature range. The rapid increase of on-resistance at lower temperature is ascribed to the presence of large densities of interface traps at the SiC/SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> interface. In addition, the breakdown voltage is also measured down to 93K and found to increase monotonously with temperature. A set of parameters, determining the breakdown voltage of 4H-SiC MOSFET at different temperatures, is put forward in this paper, by fitting the experimental data." @default.
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- W2009943423 date "2013-03-01" @default.
- W2009943423 modified "2023-09-25" @default.
- W2009943423 title "Cryogenic and high temperature performance of 4H-SiC power MOSFETs" @default.
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- W2009943423 doi "https://doi.org/10.1109/apec.2013.6520209" @default.
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