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- W2009980929 abstract "Thin-film ZnS:TbF3 was deposited by sputtering and a thin-film electroluminescent panel having a display area of 34 mm × 34 mm was fabricated. The brightness distribution was investigated and film thickness variation and distribution of Tb luminescence centers were studied in conjunction with the brightness. It was found that uniformity of the brightness increases as the applied voltage increases and frequency decreases. Relative brightness deviation (Bmax -Bmin,)/Ba, where Bmax, Bmin and Ba indicate maximum, minimum and average brightness, respectively, of the film was 13 to 23% when it was driven by 5 kHz, 40-V voltage. It was observed that brightness distribution depends on film thickness of the ZnS:TbF3 layer and that the thinner part has higher brightness. Based on the consideration that thickness variation causes irregular field intensity as well as the conduction charge distribution, and results in brightness variation, we calculated the brightness deviation and found that it agreed well with the experimental results. It was also demonstrated that Tb ions were scattered uniformly in the sputtered ZnS film, which was proved to have uniform luminescence center distribution." @default.
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- W2009980929 date "1985-05-01" @default.
- W2009980929 modified "2023-09-27" @default.
- W2009980929 title "Brightness distribution in rf-sputtered zns:tbf3 electroluminescent panels" @default.
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- W2009980929 doi "https://doi.org/10.1002/ecjb.4420680504" @default.
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