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- W2009993174 abstract "Detailed studies of the effects induced on the R 30° 4H-SiC(0001) surface after different NO exposures, at a substrate temperature of 800 °C, have been made. Photoemission experiments using synchrotron radiation were performed in order to study the properties of the interface formed after gas exposures. Recorded Si 2p spectra show three shifted components, besides the bulk SiC peak. These are assigned as originating from Si3N4 or Si1+ sub-oxide, N–Si–O and SiO2. It was concluded that SiO2 does grow on top of N–Si–O and that Si3N4/Si1+ is located at the interface. Two N 1s components are observed after NO exposures. The main one, located at around 398.05 eV, is assigned as originating from Si3N4 and the weaker one is suggested to correspond to N–Si–O bonding. The assignments are made with the aid of Si 2p and N 1s spectra collected after NH3 and O2 exposures under similar conditions. No graphite-like carbon or carbon by-product at the interface can be detected after large NO or O2 exposures." @default.
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- W2009993174 date "2004-08-07" @default.
- W2009993174 modified "2023-10-02" @default.
- W2009993174 title "Studies of NO on 4H-SiC(0001) using synchrotron radiation" @default.
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- W2009993174 doi "https://doi.org/10.1088/0953-8984/16/33/003" @default.
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