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- W2010047896 abstract "Structural dependence on annealing of a-SiO<SUB>x</SUB>:H was studied by using infrared absorption and Raman scattering. The appearance of Raman peaks in the range of 513 - 519 cm<SUP>-1</SUP> after 1170 degree(s)C annealing was interpreted as the formation nanocrystalline silicon with the sizes from 3 - 10 nm. The Raman spectra also show the existence of amorphous-like silicon phase, which is associated with Si-Si bond re-construction at boundaries of silicon nanocrystallites. The presence of the shoulder at 980 cm<SUP>-1</SUP> of Si-O-Si stretching vibration at 1085 cm<SUP>-1</SUP> in infrared spectra imply that except that SiO<SUB>2</SUB> phase, there is silicon sub-oxide phase in the films annealed at 1170 degree(s)C. This sub-oxide phase is located at the interface between Si Crystallites and SiO<SUB>2</SUB>, and thus support the shell model for the mixed structures of Si grains and SiO<SUB>2</SUB> matrix." @default.
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- W2010047896 date "2000-11-29" @default.
- W2010047896 modified "2023-09-24" @default.
- W2010047896 title "Raman scattering and infrared absorption of silicon nanocrystals in silicon oxide matrix" @default.
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- W2010047896 doi "https://doi.org/10.1117/12.408447" @default.
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