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• W2010062141 abstract "Various methods to electrodeposit films of CuInSe(S)2 are discussed. Two basically different methods are treated separately: electrodeposition of the ternary CuInSe(S) systems and deposition of a CuIn alloy followed by annealing in an Se(S)-containing atmosphere. Electrodeposition of the ternary CuInSe(S) systems includes CuInS2 (and CuIn5S8) plated from a thiourea bath. Morphological, compositional and photoelectrochemical behaviour of these layers is discussed. Attempts to plate CuInSe2 from an SeO2-containing bath and CuInS2 from a non-aqueous sulphur-containing bath are also treated. Discussion of the second method, deposition of a CuIn alloy, concentrates on the alloy deposition step. Both co-deposition of copper and indium and sequential deposition of indium on copper are treated, with emphasis on the morphology of the layers." @default.
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• W2010062141 date "1986-01-01" @default.
• W2010062141 modified "2023-10-16" @default.
• W2010062141 title "Electrodeposition of CuInSe2 and CuInS2 films" @default.
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• W2010062141 doi "https://doi.org/10.1016/0379-6787(86)90088-8" @default.
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