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- W2010079877 abstract "The influence of dislocations on electron transport properties of undoped InN thin films grown by molecular-beam epitaxy on AlN(0001) pseudosubstrates is reported. The microstructure and the electron transport in InN(0001) films of varying thickness were analyzed by transmission electron microscopy and variable temperature Hall-effect measurements. It was found that crystal defects have strong effects on the electron concentration and mobility of the carriers in the films. In particular, the combined analysis of microscopy and Hall data showed a direct dependence between free carrier and dislocation densities in InN. It was demonstrated that threading dislocations are active suppliers of the electrons and an exponential decay of their density with the thickness implies the corresponding decay in the carrier density. The analysis of the electron transport yields also a temperature-independent carrier concentration, which indicates degenerate donor levels in the narrow band-gap InN material. The relative insensitivity of the mobility with respect to the temperature suggests that a temperature-independent dislocation strain field scattering dominates over ionized impurity∕defect and phonon scattering causing the increase of the mobility with rising layer thickness due to the reducing dislocation density. Room temperature mobilities in excess of 1500cm2V−1s−1 were obtained for ∼800nm thick InN layers with the dislocation densities of ∼3×109cm−2." @default.
- W2010079877 created "2016-06-24" @default.
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- W2010079877 date "2006-11-01" @default.
- W2010079877 modified "2023-10-02" @default.
- W2010079877 title "Effect of dislocations on electrical and electron transport properties of InN thin films. II. Density and mobility of the carriers" @default.
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- W2010079877 cites W1971223999 @default.
- W2010079877 cites W1975067691 @default.
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- W2010079877 cites W1977045271 @default.
- W2010079877 cites W1977257106 @default.
- W2010079877 cites W1978572330 @default.
- W2010079877 cites W1979062160 @default.
- W2010079877 cites W1979083611 @default.
- W2010079877 cites W1980230186 @default.
- W2010079877 cites W1988213965 @default.
- W2010079877 cites W1991867047 @default.
- W2010079877 cites W1995421517 @default.
- W2010079877 cites W1998521278 @default.
- W2010079877 cites W2005446389 @default.
- W2010079877 cites W2007407482 @default.
- W2010079877 cites W2007454908 @default.
- W2010079877 cites W2010023993 @default.
- W2010079877 cites W2012620877 @default.
- W2010079877 cites W2013922428 @default.
- W2010079877 cites W2015490872 @default.
- W2010079877 cites W2016295172 @default.
- W2010079877 cites W2020579855 @default.
- W2010079877 cites W2023207502 @default.
- W2010079877 cites W2024919503 @default.
- W2010079877 cites W2026198534 @default.
- W2010079877 cites W2026421206 @default.
- W2010079877 cites W2026520373 @default.
- W2010079877 cites W2028189554 @default.
- W2010079877 cites W2028979733 @default.
- W2010079877 cites W2031060771 @default.
- W2010079877 cites W2031467416 @default.
- W2010079877 cites W2032978185 @default.
- W2010079877 cites W2037954626 @default.
- W2010079877 cites W2039956814 @default.
- W2010079877 cites W2041841986 @default.
- W2010079877 cites W2041975188 @default.
- W2010079877 cites W2046224418 @default.
- W2010079877 cites W2047286839 @default.
- W2010079877 cites W2048333394 @default.
- W2010079877 cites W2050659890 @default.
- W2010079877 cites W2051564649 @default.
- W2010079877 cites W2053434694 @default.
- W2010079877 cites W2058198868 @default.
- W2010079877 cites W2058222998 @default.
- W2010079877 cites W2063563821 @default.
- W2010079877 cites W2065134588 @default.
- W2010079877 cites W2067476352 @default.
- W2010079877 cites W2069466226 @default.
- W2010079877 cites W2074191011 @default.
- W2010079877 cites W2074236704 @default.
- W2010079877 cites W2075703112 @default.
- W2010079877 cites W2078560478 @default.
- W2010079877 cites W2079039878 @default.
- W2010079877 cites W2079054519 @default.
- W2010079877 cites W2081109739 @default.
- W2010079877 cites W2082064163 @default.
- W2010079877 cites W2083568234 @default.
- W2010079877 cites W2084538554 @default.
- W2010079877 cites W2085501671 @default.
- W2010079877 cites W2086044713 @default.
- W2010079877 cites W2088581635 @default.
- W2010079877 cites W2089492764 @default.
- W2010079877 cites W2092268772 @default.
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- W2010079877 cites W2093580783 @default.
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- W2010079877 doi "https://doi.org/10.1063/1.2363234" @default.
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