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- W2010095127 abstract "FeTaN films with moderate Bs of 14 kG and high resistivity of 100–150 μΩ cm have been investigated. Even with a low Ta incorporation of only 3 at. %, films with the above characteristics were obtained by using rf diode and dc magnetron sputtering. When the soft magnetic properties were optimized, only a body-centered-cubic α-Fe phase was found, and it had a significantly expanded crystal lattice. The films exhibited a nearly amorphous grain structure. It was found that low atomic mobility of the sputtered atoms was needed in order to promote formation of this phase." @default.
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- W2010095127 date "1999-04-15" @default.
- W2010095127 modified "2023-09-27" @default.
- W2010095127 title "FeTaN films with ultrafine grain structure" @default.
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