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• W2010097211 startingPage "1922" @default.
• W2010097211 abstract "Temperature dependences of the threshold energy, δ, between the X 1 -band with effective mass m 1 * and the X 3 -band with m 2 * , and the ratio m 2 * / m 1 * were obtained for the donor(Te)-doped GaP with a concentration of N D =1.8∼60×10 17 cm -3 , from the X 1 –X 3 absorption bands measured at various temperatures T and the theoretical curve fittings. δ increases smoothly with decreasing T for 135< T <300K for the lightly-doped sample, whereas δ shows anomalous increase below about 190K for the heavily-doped samples. This anomaly is explained by the electrons falling deep into the band-tail. It can be confirmed by the calculations of electron energy distributions in the parabolic part and band-tail of the conduction band using a density-of-states model. The calculations give the average depth of the band-tail as 11 meV for N D =20.9×10 17 cm -3 ." @default.
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• W2010097211 date "1988-10-01" @default.
• W2010097211 modified "2023-09-23" @default.
• W2010097211 title "Conduction Band-Tail Estimated from the Temperature Dependence of X₁–X₃ Threshold Energy in Heavily-Doped n-GaP" @default.
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• W2010097211 doi "https://doi.org/10.1143/jjap.27.1922" @default.
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