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- W2010139809 abstract "Abstract An automatically controlled liquid phase epitaxy process has been developed for the growth of superlattice structures with layers in the thickness range 50–300 nm. Homojunction structures in InP or In 1-x Ga x As y P 1-y have been grown with from 18 to 102 alternating p and n layers. Heterostructures with undoped layers of smaller band-gap separating the p and n layers have also been produced. A sideways offset of the position of the solutions allowed all p and all n stacks to be deposited at opposite ends of the substrate in addition to the interleaved layers at the centre. Simple ohmic contacts to the p and n ends enabled the electroabsorption characteristics of the central area to be measured for light travelling perpendicular to the junction planes. Only a few volts produced significant changes in absorption at wavelength from 1.2 to 1.3 μm, in agreement with theory." @default.
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- W2010139809 date "1987-08-01" @default.
- W2010139809 modified "2023-09-27" @default.
- W2010139809 title "Electroabsorptive In1-xGaxAsyP1-y superlattices grown by liquid phase epitaxy" @default.
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- W2010139809 doi "https://doi.org/10.1016/0022-0248(87)90140-0" @default.
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