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• W2010165034 abstract "We present a simple but reliable method to determine the azimuthal orientational spread of imperfect epitaxial layers by x-ray diffraction. This method requires the measurement of ω-scans in skew geometry from reflections with increasing lattice plane inclination φ, and a fit of the data by a geometrical model that considers the simultaneous presence of polar and azimuthal orientational spread within the layer. The values thus obtained for various GaN layers grown on SiC are shown to be in good agreement with those measured directly by φ-scans of the (11̄00) reflection in grazing incidence, and with those deduced from the edge dislocation densities determined by plan-view transmission electron microscopy." @default.
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• W2010165034 date "2002-12-17" @default.
• W2010165034 modified "2023-10-16" @default.
• W2010165034 title "Determination of the azimuthal orientational spread of GaN films by x-ray diffraction" @default.
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• W2010165034 doi "https://doi.org/10.1063/1.1531832" @default.
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