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- W2010168025 abstract "A p-Ge semiconductor experiment is investigated by the help of both probabilistic and dynamical characterization methods. Dimensions, Lyapunov exponents, and the corresponding scaling functions are calculated. Two exemplary files of data from the p-Ge semiconductor experiment exhibiting spontaneous (i.e., undriven) resistance oscillations in the low-temperature avalanche breakdown are shown to be chaotic and hyperchaotic, respectively. For the first file, we obtained a fractal dimension between two and three and one positive Lyapunov exponent, whereas for the second file we found a fractal dimension between three and four and two positive Lyapunov exponents. Adopting the terminology introduced by Rössler, the behavior corresponding to the latter file is called hyperchaotic. Furthermore, using the language of the thermodynamical formalism, the probabilistic scaling function evaluated for the hyperchaotic state indicates a phase-transition-like-behavior." @default.
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- W2010168025 date "1989-05-01" @default.
- W2010168025 modified "2023-09-25" @default.
- W2010168025 title "A p-Ge semiconductor experiment showing chaos and hyperchaos" @default.
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- W2010168025 doi "https://doi.org/10.1016/0167-2789(89)90078-x" @default.
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