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- W2010182110 abstract "In our previous report (Takagaki et al 2011 Semicond. Sci. Technol. 26 085031), we have demonstrated that the Bi atoms in Bi2Se3 are substituted by the substrate atoms when its growth is attempted on the surface of transition metals using the hot-wall-epitaxy method. Here, we show that the substitution takes place similarly when Bi2Te3 and Sb2Te3 are employed as the source materials. For Ag, Cu and Ta substrates, Bi and Sb atoms are replaced completely, whereas the replacement is partial for Ni. Au induces no substitution and, on the contrary, helps to form Bi2Te3 and Sb2Te3 crystals at high temperatures. The lowering of the melting point of the substrate metals by inclusion of source elements causes some dependences of the growth outcome on the source materials. We also perform optical characterizations of the silver, copper and nickel tellurides synthesized by the substitution." @default.
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- W2010182110 date "2012-06-07" @default.
- W2010182110 modified "2023-09-25" @default.
- W2010182110 title "Incorporation of transition metals in the hot-wall-epitaxy growth of Bi2Te3and Sb2Te3" @default.
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- W2010182110 doi "https://doi.org/10.1088/0268-1242/27/8/085006" @default.
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