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- W2010206585 abstract "The depth distributions of ion-implanted arsenic in glow discharge deposited a-Si(H) have been investigated using MgKα excited photoelectron spectroscopy comboned with the ion mill. Results obtained are in reasonably good agreement with the theoretical predictions. The broadening of the arsenic distribution after annealing at 600°C was used for determining the diffusion coefficient which is 2×10−15 cm2s−1. Attention is paid to a serious problem of a surface and subsurface contamination." @default.
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- W2010206585 modified "2023-09-27" @default.
- W2010206585 title "Detectability limits for boron and phosphorus in silicon by Auger electron spectroscopy (AES)" @default.
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- W2010206585 doi "https://doi.org/10.1016/0039-6028(74)90083-1" @default.
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