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• W2010221822 startingPage "087701" @default.
• W2010221822 abstract "Ultrathin high-k dielectric ErAlO films were deposited on Si (100) substrates by using radio-frequency magnetron sputtering. The very flat surface of the annealed film with a rms roughness less than 0.25nm was observed by using an atomic force microscope. The film shows good thermal stability when annealing at 900°C for 30 s in the O2 ambient. The effective dielectric constant of the film is around 15.2, and a low leakage current of 8.4 × 10−5 A/cm2 at an electric field of 1 MV/cm was achieved for the film with the equivalent oxide thickness of 2.0 nm after annealing." @default.
• W2010221822 created "2016-06-24" @default.
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• W2010221822 creator A5031569378 @default.
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• W2010221822 date "2012-08-01" @default.
• W2010221822 modified "2023-10-16" @default.
• W2010221822 title "Structural and Electrical Characteristics of Amorphous ErAlO Gate Dielectric Films" @default.
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• W2010221822 doi "https://doi.org/10.1088/0256-307x/29/8/087701" @default.
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