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- W2010302889 abstract "Hydrogenated amorphous silicon nitride (a-SiNx:H) films prepared by plasma-enhanced chemical vapor deposition in silane-ammonia radio frequency glow discharge were studied around the stoichiometry by Raman spectroscopy. The properties of these films were investigated using a micro-Raman setup and a reflector substrate to enhance the recorded signal. A spectroscopic signature that discriminates among the different amorphous films showed a gradual building up of the phonon density of states when increasing the level of nitrogenation up to N/Si=1.4. For this composition, a-SiN:H keeps the memory of the corresponding Si3N4 crystal modes. Besides, the Si–N stretching modes of the Nn–Si–H(4−n) evidenced the stages of the substitution of H by NH bonds allowing to ascribe the lines located at 1050, 1015, and 820 cm−1 to SiN4, N3–Si–H, and N2–Si–H2 groups, respectively." @default.
- W2010302889 created "2016-06-24" @default.
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- W2010302889 date "1999-06-01" @default.
- W2010302889 modified "2023-10-18" @default.
- W2010302889 title "Nitrogen bonding environments and local order in hydrogenated amorphous silicon nitride films studied by Raman spectroscopy" @default.
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- W2010302889 doi "https://doi.org/10.1063/1.370604" @default.
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