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- W2010324476 abstract "Thermal oxide several thousand angstroms thick on Si is the basis of Si integrated circuits. Si surface has nearly ideal properties but always tends toward n-type. At elevated temperatures or with voltage across oxide, Si surface potential (φ) changes. It is of interest to determine to what extent these changes are intrinsic to the system. Na impurity has been identified by neutron activation to be in “clean” oxide at ppm concentrations, sufficient to cause observed electrical shifts (δφ). Combined field effect electrical measurements (Metal/Oxide/Si = MOS) and radiochemical analysis on the same samples relates impurity distributions in oxide with δφ · Na and φ correlate in diffusion. Anion drag is seen. It is inferred that Na is neutralized within oxide except within a few 100 Å of Si. A part of the observed Na distribution can be drifted in an electric field. Na drifted to the Si interface correlates with δφ. Subsequent electrical recovery of φ is much faster than Na out-drift, indicating charge exchange controls electrical recovery rate. Na does not influence φ in oxides in which phosphorus has been diffused to concentrations greater than that of Na." @default.
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- W2010324476 title "Combined MOS and radiochemical analysis of impurities in SiO2 on Si" @default.
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- W2010324476 doi "https://doi.org/10.1016/0039-6028(69)90246-5" @default.
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