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- W2010330147 abstract "In hydride vapor phase epitaxy (VPE), substituting an inert N2 gas for H2 gas as the carrier gas in the Fe source region, and mixing H2 in the growth region, the Fe concentration in Fe-doped InP has been remarkably increased. The maximum Fe concentration for Fe-doped InP measured by SIMS is 9 x 1018 cm-3, and the unoccupied trap concentration is 2.7 x 1016 cm-3. These values were 100 and 4 times higher than those for Fe-doped InP layer grown by conventional hydride VPE, respectively. A resulting maximum resistivity of 1.3 x 109Ω cm, was obtained. It was found that the unoccupied trap concentration was inversely proportional to the growth rate in both cases of H2 carrier and N2+H2 carrier. This shows that the amount of Fe atoms incorporated in InP layer per unit time and unit surface area is constant, independent of the growth rate, when a constant amount of FeCl2 is transported to the growth region." @default.
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- W2010330147 date "1989-05-01" @default.
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- W2010330147 title "Epitaxial growth of highly Fe-doped semi-insulating InP layers by N2 carrier gas mixed hydride vapor phase epitaxy" @default.
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- W2010330147 doi "https://doi.org/10.1016/0022-0248(89)90269-8" @default.
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