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• W2010339750 abstract "We report a structural and electrical study of sputter-deposited SiO2/MgO barriers for developing magnetic Si-based transistors. We propose that SiO2/MgO tunneling barriers may utilize spin-filtering by achieving crystalline MgO (001) while reducing spin-scattering due to the Si/SiO2 interface. We find that MgO (&lt;3 nm thick) crystallizes with (001) preferred orientation on thermally oxidized Si(&lt;2 nm). Typical processing temperatures do not cause significant intermixing with SiO2 or ferromagnetic electrode. Conversely, MgO on Si is amorphous up to 2 nm thick. Capacitance-voltage characteristics of MgO capacitors are influenced significantly by the density of interface-states, as high as 5×1013 cm−2 eV−1 while Si/SiO2/MgO structures are electrically beneficial by reducing to 6×1012 cm−2 eV−1." @default.
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• W2010339750 date "2009-07-27" @default.
• W2010339750 modified "2023-10-18" @default.
• W2010339750 title "Structural and electrical characterization of SiO2/MgO(001) barriers on Si for a magnetic transistor" @default.
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• W2010339750 doi "https://doi.org/10.1063/1.3182732" @default.
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