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- W2010391710 abstract "A set of strained-layer GexSi1-x/Si multiple quantum wells has been investigated by electroreflectance (ER) spectroscopy. In the ER spectra we have observed transitions in the quantum wells associated with the critical points E0, E1, as well as E'0. The transitions of E0 and E'0, which are very weak in the bulk material, are apperently enhanced in quantum wells." @default.
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- W2010391710 date "1994-02-01" @default.
- W2010391710 modified "2023-09-24" @default.
- W2010391710 title "Electroreflectance Study of Strained Layer Ge x Si 1-x /Si Multiple Quantum Wells" @default.
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- W2010391710 doi "https://doi.org/10.1088/0256-307x/11/2/016" @default.
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