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• W2010400406 abstract "Pentacene organic thin-film transistors (OTFTs) with HfLaO high-κ gate dielectric were fabricated. The dielectric was prepared by a sputtering method and then annealed in N <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> , NH <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> , O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> , or NO at 400 °C. The carrier mobility of the NH <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> -annealed OTFT could reach 0.59 cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> /V · s, which is higher than those of the other three devices. Moreover, the NH <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> -annealed OTFT obtained the smallest subthreshold swing of 0.26 V/dec among them. Furthermore, 1/f noise measurement indicated that the NH <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> -annealed OTFT achieved the smallest 1/f noise. All these should be attributed to the improved interface between the gate dielectric and the organic semiconductor associated with the passivation effects of the NH <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> annealing on the dielectric surface." @default.
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• W2010400406 date "2011-01-01" @default.
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• W2010400406 title "Effects of Different Annealing Gases on Pentacene OTFT With HfLaO Gate Dielectric" @default.
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• W2010400406 doi "https://doi.org/10.1109/led.2010.2087314" @default.
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