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- W2010407239 abstract "Control of the grain boundary direction in the recrystallized polycrystalline silicon (polysilicon) island is achieved by the direction of the laser scanning. By using this technique, the source-to-drain short in a short-channel MOSFET is almost eliminated, and MOSFETs with channel lengths of 2–3 μm level in both n-channel and p-channel mode are fabricated with a good uniformity and reproducibility. The low-field electron and hole mobilities are 580 cm2/Vsec and 220 cm2/Vsec, respectively. 19-stage CMOS ring oscillators with nominal channel lengths of 3μm are fabricated. The minimum propagation delay is 280 psec/stage at a supply voltage of 10 V, and the minimum power delay product is 0.13 pJ/stage." @default.
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- W2010407239 date "1983-11-01" @default.
- W2010407239 modified "2023-09-26" @default.
- W2010407239 title "SOI-CMOS devices on beam-recrystallized polysilicon" @default.
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- W2010407239 doi "https://doi.org/10.1016/0167-9317(83)90004-7" @default.
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