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• W2010489688 abstract "In this work, Conductive Atomic Force Microscope (CAFM) experiments have been combined with device level measurements to evaluate the impact of an electrical stress applied on MOS structures with a 9.8 nm thick SiO2 layer for memory devices. Charge trapping in the generated defects and leakage current measured at the nanoscale have been correlated to the measurements obtained on fully processed MOS structures." @default.
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• W2010489688 date "2009-09-01" @default.
• W2010489688 modified "2023-09-25" @default.
• W2010489688 title "Trapped charge and stress induced leakage current (SILC) in tunnel SiO2 layers of de-processed MOS non-volatile memory devices observed at the nanoscale" @default.
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• W2010489688 doi "https://doi.org/10.1016/j.microrel.2009.06.016" @default.
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