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- W2010524056 abstract "We demonstrate electrical injection of spin-polarized electrons from sputtered Mn <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>5</sub> Ge <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> C <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.8</sub> contacts into degenerately doped n-Ge layers on Si as an important step towards integrating spin injection into Ge channels into a CMOS-compatible fabrication process." @default.
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- W2010524056 date "2014-06-01" @default.
- W2010524056 modified "2023-10-18" @default.
- W2010524056 title "Spin accumulation in n-Ge on Si with sputtered Mn<inf>5</inf>Ge<inf>3</inf>C<inf>0.8</inf>-contacts" @default.
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