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- W2010529448 abstract "Abstract Using facing target sputtering, crystalline barium ferrite (BaFe 12 O 19 , BaM) has been deposited onto a silicon nitride coated carbon substrate, producing high-quality, randomly oriented crystalline films in-situ at a substrate temperature of 640°C without post-deposition annealing. Using inductive read-write heads, longitudinal recording tests reveal that randomly oriented BaM thin films have a linear recording density ( D 50 ) greater than 100 kfci and a high signal to noise ratio (∼39 dB). The low noise performance of BaM thin film is consistent with its measured small and negative ΔM value, indicating no intergranular exchange interaction. It is argued that BaM is intrinsically a low-noise medium with exchange decoupled grains, regardless of how the grains are oriented and how dense the sputtered films are." @default.
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- W2010529448 date "1996-02-01" @default.
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- W2010529448 title "As-deposited crystalline barium ferrite thin film media for longitudinal recording" @default.
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