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• W2010532812 abstract "The growth of dark line defects (DLD’s) has been observed in epitaxial AlGaAs wafers under optical pumping. The growth velocity as a function of optical intensity is given by V=AI1.8. In addition to recombination-enhanced defect motion, stress-induced dislocation glide is shown to contribute to the elongation of DLD’s in 〈100〉 and 〈110〉 directions. A climb mechanism may be responsible for the thickening of DLD’s after growth in 〈100〉 directions. The asymmetric growth of DLD’s between 〈110〉 and 〈11̄0〉 directions is attributed to the existence of α and β dislocations and the absence of 90° rotational symmetry in the zinc-blende structure." @default.
• W2010532812 created "2016-06-24" @default.
• W2010532812 creator A5066276980 @default.
• W2010532812 date "1985-07-15" @default.
• W2010532812 modified "2023-09-23" @default.
• W2010532812 title "Dark line defect growth in optically pumped Al_<i>x</i>Ga_1−<i>x</i>As laser material" @default.
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• W2010532812 doi "https://doi.org/10.1063/1.336181" @default.
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