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- W2010566913 abstract "This paper presents an exploration of the possibility of using a resistive MOS-gated diode as a light sensor. It is shown that the maximum useful scan frequency of a single device is limited to a few Hz. This limitation is caused by charging and discharging currents associated with the movement of charge under the resistive gate electrode. However a method for compensating these currents is presented. This technique extends the useful scan frequencies to hundreds of Hz. Also included in the paper is a consideration of (a) factors which determine the maximum scan frequency of a compensated device and (b) the nature of the various photocurrents which arise in a resistive MOS-gated diode." @default.
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- W2010566913 date "1973-02-01" @default.
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- W2010566913 title "Resistive MOS-gated diode light sensor" @default.
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- W2010566913 doi "https://doi.org/10.1016/0038-1101(73)90026-9" @default.
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