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• W2010572012 abstract "The identification of a nontrigonal Ge dangling bond at SiO2/Si1-xGex/SiO2 heterostructures and its electrical activity are discussed, both from experimental and theoretical points of view. This dangling bond is observed from multifrequency electron-spin resonance experiments performed at 4.2K, for typical Ge concentrations in the range [email protected][email protected]?0.85. The electrical activity of this defect is revealed from capacitance-voltage characteristics measured at 300 and 77K, and is found to behave like an acceptor defect. First-principles calculations of the electronic properties of this Ge dangling bond indicate that its energy level approaches the valence band edge of the Si1-xGex layer as the Ge content increases, confirming its acceptor-like nature." @default.
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• W2010572012 date "2011-04-01" @default.
• W2010572012 modified "2023-10-16" @default.
• W2010572012 title "Experimental and theoretical investigation of defects at (100) Si1−xGex/oxide interfaces" @default.
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• W2010572012 doi "https://doi.org/10.1016/j.mee.2010.09.001" @default.
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