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- W2010583116 abstract "Abstract The δ- and homogeneously-doped high electron mobility transistor (HEMTs) employing a graded In x Ga 1− x As quantum well as the active channel grown by low-pressure metal organic chemical vapor deposition (LP-MOCVD) were studied qualitatively. The proposed graded In x Ga 1− x As pseudomorphic structure manifests higher saturation current densities and transconductances which may be mainly attributed to its superior confinement and lower interface roughness scattering at the GaAs/In x Ga 1− x As interface." @default.
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- W2010583116 date "1993-08-01" @default.
- W2010583116 modified "2023-10-18" @default.
- W2010583116 title "Enhanced current driving capability GaAs/graded InxGa1−xAs/GaAs high electron mobility transistor" @default.
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- W2010583116 doi "https://doi.org/10.1016/0038-1101(93)90194-u" @default.
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