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• W2010590769 abstract "The Schottky barrier height (SBH) of CoSi2 contacts formed by solid state reaction of Co, Co/Ti, Ti/Co and Ti/Co/SiO2 on n-Si(1 0 0) substrates has been measured in the temperature range from 80 to 300 K with the use of current– and capacitance–voltage techniques. The forward I–V characteristics are analyzed on the basis of the standard thermionic emission model and the assumption of a Gaussian distribution of the barrier heights. The difference in SBHs determined from the I–V and C–V data is temperature dependent. From this difference, the standard deviation and its temperature coefficient are derived and are in the range of 58–78 meV and −0.07 to −0.14 meV K−1, respectively. The Richardson plots, modified according to the Gaussian distribution model, have a good linearity over the whole temperature range for all samples. The corresponding activation energy is in good agreement with the barrier height determined from the C–V data. The SBH of the CoSi2 contacts grown from Co and Ti bimetallic layers is lower than that grown from a Co layer only. The temperature coefficient of the SBH varies from approximately −0.16 meV K−1 for polycrystalline CoSi2 to ∼0 meV K−1 for epitaxial CoSi2 contacts, thus suggesting different interfacial Fermi level pinning at the CoSi2/Si contacts grown from different multilayer structures." @default.
• W2010590769 created "2016-06-24" @default.
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• W2010590769 date "2000-10-01" @default.
• W2010590769 modified "2023-10-02" @default.
• W2010590769 title "Electrical characteristics of CoSi2/n-Si(100) Schottky barrier contacts formed by solid state reaction" @default.
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• W2010590769 doi "https://doi.org/10.1016/s0038-1101(00)00127-1" @default.
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