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- W2010604002 abstract "Extreme Ultraviolet Lithography (EUVL) masks have residual stress induced by several thin films on low thermal expansion material (LTEM) substrates. The stressed thin films finally result in convex out-of-plane displacement (OPD) of several 100s of nm on the pattern side of the mask. Since EUVL masks are chucked on EUVL scanners differently from on e-beam writer, the mask pattern placement errors (PPE) are necessary to be corrected for to reduce overlay errors. In this paper, experimental results of pattern placement error correction using standard chrome on glass (COG) plate will be discussed together with simulations. Excellent agreement with simple bending theory is obtained. Suitability of the model to compensate for other EUVL-related PPEs due to mask non-flatness will be discussed." @default.
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- W2010604002 date "2008-10-24" @default.
- W2010604002 modified "2023-09-23" @default.
- W2010604002 title "Pattern placement correction due to bending in EUVL masks" @default.
- W2010604002 cites W2012280277 @default.
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- W2010604002 doi "https://doi.org/10.1117/12.801542" @default.
- W2010604002 hasPublicationYear "2008" @default.
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