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• W2010658051 abstract "Abstract The MOMBE (metalorganic molecular beam epitaxy) growth of GaSb on GaSb substrates with different orientations, (100), (511), (411), (311), (211) and (111), and on patterned (100) GaSb substrates was investigated for the first time using TEG and Sb4 as source materials. With increasing substrate temperatures from 450 to 600°C, the growth rate of GaSb shows a strong increase on the (511)B, (411)B and (311)B substrates. The maximum growth rate of GaSb was obtained on the (411) planes at Tsub ⪢ 500°C. Increase of the growth rate on (511)B, (411)B and (311)B surfaces is explained by an enhanced decomposition of triethylgallium (TEG) on the substrate surface which has a high density of atomic steps. Growth of multi-layers of GaSb and AlSb on patterned (100) GaSb substrates confirms the results obtained for the planar surfaces by showing the fast growth of the (411)B plane and almost no growth on the (111)B plane. This indicates the possibility for growth of GaSb/AlSb quantum-wire structures." @default.
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• W2010658051 date "1995-05-01" @default.
• W2010658051 modified "2023-09-27" @default.
• W2010658051 title "Metalorganic molecular beam epitaxy of GaSb on patterned GaSb substrates using triethylgallium and Sb4" @default.
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• W2010658051 doi "https://doi.org/10.1016/0022-0248(95)80064-j" @default.
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