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• W2010684103 abstract "Reflection high energy electron diffraction and resistivity measurements were performed on an In/Si(111) system. The deposition of about one monolayer of indium onto a clean Si(111) surface produces a 4 × 1 superstructure at temperatures from 500 to 740 K. Further deposition of one or two monolayers causes the 4 × 1 structure to disappear and only a 1 × 1 structure remains. This 1 × 1 In surface is found to have the characteristic property that the 1 × 1 area moves in an electric field like a positive carrier with a much higher mobility than that of conventional electromigration and the sheet conductance of the substrate increases markedly on the formation of the 1 × 1 In surface." @default.
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• W2010684103 date "1982-12-01" @default.
• W2010684103 modified "2023-10-03" @default.
• W2010684103 title "Field-induced surface transport of indium adatoms on Si(111) surfaces" @default.
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• W2010684103 doi "https://doi.org/10.1016/0040-6090(82)90278-4" @default.
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