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- W2010698883 abstract "The appearance of carrier traps and the deactivation of dopants are typical hydrogen-related phenomena that are of prime importance to the reliability of traditional Si-based devices. Here we probe with first-principles calculations, the dynamics of hydrogen as individual impurities or in complexes with dopants in strained Si (s-Si) and SiGe systems. We find that the charged state determines the tendency of hydrogen to be released from dopant sites and to shuttle between a SiGe substrate and a s-Si overlayer. In this way, the effect of hydrogen differs between accumulation and inversion cycles of s-Si and SiGe devices." @default.
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- W2010698883 date "2010-06-21" @default.
- W2010698883 modified "2023-09-23" @default.
- W2010698883 title "Hydrogen–dopant interactions in SiGe and strained Si" @default.
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- W2010698883 doi "https://doi.org/10.1063/1.3456395" @default.
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