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- W2010704585 abstract "Abstract Nanocrystalline gallium nitride (GaN) was prepared via one simple route by the reaction of metallic magnesium powders with gallium sesquioxide (Ga 2 O 3 ) and ammonium chloride (NH 4 Cl) in an autoclave at 650 °C. X-ray powder diffraction (XRD) pattern indicated that the product was hexagonal GaN, and the cell constant was ( a = 3.18962 A, c = 5.18674 A). Scanning electron microscopy (SEM) images showed that the sample consisted of particles with an average size of about 30 nm in diameter. Raman spectroscopy study showed a frequency shift towards lower side due to the polycrystalline nature of the synthesized GaN. The hexagonal GaN powder exhibited good photocatalytic activity in degradation of Rhodamine-B (RhB) under 300 W mercury lamp light irradiation. The product was also studied by the thermogravimetric analysis (TGA). It had good thermal stability and oxidation resistance below 750 °C in air." @default.
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- W2010704585 date "2010-06-01" @default.
- W2010704585 modified "2023-10-18" @default.
- W2010704585 title "Synthesis, thermal stability, and photocatalytic activity of nanocrystalline gallium nitride via the reaction of Ga2O3 and NH4Cl at low temperature" @default.
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- W2010704585 doi "https://doi.org/10.1016/j.jallcom.2010.03.185" @default.
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