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- W2010707848 abstract "An improved double-recessed 4H-SiC MESFETs structure with recessed source/drain drift region was proposed. The recessed source/drain drift region is to reduce channel thickness between gate and drain as well as eliminate gate depletion layer extension to source/drain. The recessed source/drain drift region of the proposed structure can be realized with the formation of double-recessed gate region. The simulated results showed that the breakdown voltage of the proposed structure is 145V compared to 109V of that of the published 4H-SiC MESFETs with double-recessed gate structure and yet maintain almost same saturation drain current characteristics. The output power density of the proposed structure is about 33% larger than that of the published double-recessed gate structure. The cut-off frequency (fT) and the maximum oscillation frequency (fmax) of the proposed structure are 21.8GHz and 81.5GHz compared to 19.0GHz and 76.4GHz of that of the published double-recessed gate structure, respectively." @default.
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- W2010707848 date "2007-12-01" @default.
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- W2010707848 title "Improved double-recessed 4H-SiC MESFETs structure with recessed source/drain drift region" @default.
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- W2010707848 doi "https://doi.org/10.1016/j.mee.2007.02.014" @default.
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