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- W2010717003 abstract "Abstract Porous silicon (PS) samples were prepared on (1 0 0) monocrystalline silicon wafers and implanted with nitrogen by plasma immersion ion implantation (PIII). Characterization by Auger electron spectroscopy (AES) showed the presence of the implanted nitrogen and also SiO2 and Si3N4 compounds on the sample surfaces. The effect of the implantation and consequently of the compounds was analyzed measuring the reflectance for wavelengths between 200 nm and 800 nm on the implanted samples. The results show a strong reduction of the reflectance in the ultraviolet region of the spectrum, in agreement with a tendency for the intensity of the peak of the ultraviolet excited photoluminescence to increase with the PIII treatment time. These characteristics can be explored and appropriately used in the fabrication of optoelectronics devices based on PS." @default.
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- W2010717003 date "2001-04-01" @default.
- W2010717003 modified "2023-09-28" @default.
- W2010717003 title "Porous silicon implanted with nitrogen by plasma immersion ion implantation" @default.
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- W2010717003 doi "https://doi.org/10.1016/s0168-583x(00)00617-0" @default.
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