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- W2010726441 abstract "Abstract Al x Ga 1− x As is an important III–V semiconductor for device applications in the optoelectronics field. Growth aspects, characterization and kinetics of Al x Ga 1− x As by organometallic - CVD are reviewed. The review primarily covers the effect of growth parameters on material preparation and material quality, doping, electronic and optical properties, and applications to devices and associated problems with their performance. Current problems of PPC centers, D.X centers, and deep level characterization in relation to the basic chemistry of the material and implications on device performance are dealt with. Growth and characterizations of exotic multilayer structures (superlattices, cascades, multiple quantum well structures, etc.) are reported in terms of current specific problems. The future of crystal growth methods employing the organometallics is assessed in relation to the current and future technologies." @default.
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- W2010726441 date "1986-01-01" @default.
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- W2010726441 title "Characterization and kinetics of AlxGa1−xAs by organometallic-CVD" @default.
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- W2010726441 doi "https://doi.org/10.1016/0146-3535(86)90010-9" @default.
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