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- W2010748163 abstract "We fabricated doping-free intrinsic amorphous silicon (i-a-Si) thin-film solar cells having a structure of glass/SnO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> /MoO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> /i-a-Si/LiF/Al. The short-circuit current density of the cell markedly increased while the open-circuit voltage and fill factor were low due to a lower work-function of the MoO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> than that of a conventional amorphous silicon carbide film. To solve these drawbacks, we UV-treated on the MoO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> layer, obtaining a greatly enhanced conversion efficiency of 6.42%." @default.
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- W2010748163 date "2014-01-01" @default.
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- W2010748163 title "Doping-Free Intrinsic Amorphous Silicon Thin-Film Solar Cell Having a Simple Structure of ${rm Glass}/{rm SnO}_{2}/{rm MoO}_{3}/{rm i}hbox{-}{rm a}hbox{-}{rm Si}/{rm LiF}/{rm Al}$" @default.
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- W2010748163 doi "https://doi.org/10.1109/led.2013.2289309" @default.
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