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- W2011018957 abstract "We investigate the structural and optical properties of InGaN-based multi-quantum wells grown on a–c plane sapphire substrates by atomic force microscopy, high-resolution x-ray diffraction and temperature-dependent photoluminescence measurements. The multi-quantum wells grown on a-plane sapphire substrate show stronger exciton localization effect compared with that grown on the c-plane substrate, although the threading dislocation densities in the two samples are almost the same. We attribute the results to the different in-plane strain of quantum well grown on different substrate orientations at the same growth temperature. Since the exciton localization effect plays a key role to obtain high efficiency InGaN-based optoelectronics devices, the presented result should be emphasized." @default.
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- W2011018957 date "2004-07-01" @default.
- W2011018957 modified "2023-09-25" @default.
- W2011018957 title "Structural and Optical Characteristics of InGaN/GaN Multi-Quantum Wells Grown on a - and c -Plane Sapphire Substrates" @default.
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- W2011018957 doi "https://doi.org/10.1088/0256-307x/21/7/039" @default.
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