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- W2011031675 abstract "Abstract We report on the electronic properties of n‐doped (n ∼ 10 18 cm ‐3 ) ZnSe/GaAs(001) heterostructures grown by molecular beam epitaxy with pre‐deposition of different amounts of Zn or Se in the fractional monolayer range at ZnSe epilayer growth start. Special attention is spent on the depletion layers on both sides of the interface and to the conduction band potential barrier. The depletion layers are studied by Raman spectroscopy and electrochemical capacitance‐voltage profiling, while the potential barrier height is derived from temperature‐dependent transport across the hetero‐interface. We observe a carrier‐depleted interface region with an overall thickness of about 50 to 65 nm. For a Zn‐rich growth start the thickness contribution on the GaAs‐side slightly prevails, but for Se‐pre‐deposition, the ZnSe‐side contribution clearly dominates, and for the highest Se pre‐deposition the total depletion width is slightly reduced. The potential barrier is 550 meV for the Zn‐rich hetero‐interface. With Se pre‐deposition it decreases down to about 70 meV, which implies an increase of the conductivity across the hetero‐interface by as much as five orders of magnitude. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)" @default.
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- W2011031675 date "2012-03-23" @default.
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- W2011031675 title "Analysis of the depletion layers and conduction band barrier at the n-ZnSe/n-GaAs interface for different growth start procedures" @default.
- W2011031675 doi "https://doi.org/10.1002/pssc.201100679" @default.
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