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- W2011034876 abstract "The effect of rapid-thermal processing (RTP) ambients on the formation of oxygen precipitates and denuded zone (DZ) in heavily boron-doped (HB) Czochralski (Cz) silicon by a low-high (L-H) two-step annealing (800°C∕4h+1000°C∕16h) has been investigated. It was found that after the L-H two-step annealing, there was a high density of bulk microdefects (BMDs) and no observable DZ was formed near the surface in HB Cz silicon wafers preannealed by the RTP in Ar ambient, while the BMD density was quite low in HB Cz silicon wafers preannealed by the RTP in O2 ambient. However, applying the preannealing of RTP sequentially in Ar and O2 ambients allowed us to obtain a high density of BMDs in combination with a sufficient DZ by the subsequent L-H two-step annealing. This approach offers a pathway to optimize internal gettering for HB Cz silicon." @default.
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- W2011034876 date "2006-11-15" @default.
- W2011034876 modified "2023-09-27" @default.
- W2011034876 title "Rapid-thermal-processing-based internal gettering for heavily boron-doped Czochralski silicon" @default.
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