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- W2011058910 abstract "The effect of NH 3 annealing on polysilicon thin-film transistors (poly-Si TFT's) is investigated. Substantial reduction of the off-state leakage current in self-aligned n-channel poly-Si TFT's is achieved upon NH 3 annealing without degradation of on-state characteristics. NH 3 annealing is believed to generate positive fixed charges in the gate oxide near the source and drain junction during NH 3 annealing. These positive fixed oxide charges reduce the electric field in the drain junction, resulting in the reduction of the leakage current. NH 3 annealing can be applied effectively to fabricate high-performance self-aligned poly-Si TFT's." @default.
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- W2011058910 date "1995-02-01" @default.
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- W2011058910 title "Suppression of Leakage Current in n-Channel Polysilicon Thin-Film Transistors UsingNH3Annealing" @default.
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- W2011058910 doi "https://doi.org/10.1143/jjap.34.882" @default.
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