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• W2011065897 abstract "The conjugated effect of growth temperature and in situ thermal annealing on the photoluminescence properties of In0.4Ga0.6As0.985N0.015/GaAs quantum wells (QWs) grown by molecular-beam epitaxy has been investigated. The interplay between growth temperature and annealing effects is such as the optimum growth temperature is not the same for as-grown and annealed samples. By using the combination of a low growth temperature and a high in situ annealing temperature, separate confinement heterostructure laser diodes with a single In0.4Ga0.6As1−xNx (x=0.015–0.021)/GaAs QW have been grown. The broad area devices emit from 1.34 to 1.44 μm at room temperature with a threshold current density of 1500–1755A∕cm2." @default.
• W2011065897 created "2016-06-24" @default.
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• W2011065897 date "2005-02-08" @default.
• W2011065897 modified "2023-10-18" @default.
• W2011065897 title "Growth and <i>in situ</i> annealing conditions for long-wavelength (Ga, In)(N, As)/GaAs lasers" @default.
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• W2011065897 doi "https://doi.org/10.1063/1.1863433" @default.
• W2011065897 hasPublicationYear "2005" @default.
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