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• W2011097809 abstract "The surface diffusion of Ni on a thermally grown silicon dioxide ultrathin film (5–50 Å), and the bulk diffusion of Ni through the silicon dioxide film into the single crystal silicon substrate have been studied by XPS, HREELS, LEED and AFM. Nickel agglomeration on the oxide surface occurs in the 100–850 K regime, while bulk Ni diffusion through the thin oxide layer to the Si substrate occurs in the 700–1050 K regime. The onset of bulk Ni diffusion is dependent on the oxide thickness; thicker oxides reduce the rate of Ni penetration [1]. Above 950–1100 K. the oxide layer desorbs leaving nickel silicide on silicon." @default.
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• W2011097809 date "1992-04-01" @default.
• W2011097809 modified "2023-10-09" @default.
• W2011097809 title "Surface and bulk diffusion of adsorbed nickel on ultrathin thermally grown silicon dioxide" @default.
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• W2011097809 doi "https://doi.org/10.1016/0039-6028(92)90491-n" @default.
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