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- W2011105554 abstract "Electron-phonon scattering is shown to increase dramatically at small nanowire cross-sections so that the transport is not ballistic. Non-ballistic dissipative device modelling requires the full complexity of the non-equilibrium Green Function (NEGF) method. The role of causality in obtaining spectral sum rule-conserving approximations to the electron-phonon self-energies is demonstrated and applications given for wrap-round gate silicon nanowire field effect transistors. Causality violations give erroneous density of states and current densities." @default.
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- W2011105554 date "2014-06-18" @default.
- W2011105554 modified "2023-10-08" @default.
- W2011105554 title "Causal self-energies for NEGF modelling of quantum nanowires" @default.
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