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• W2011105590 abstract "The annealing process of magnesium-doped gallium nitride (GaN:Mg) epilayers grown by metal-organic vapor-phase epitaxy was investigated by in situ measurements of electrical transport properties. The resistivity ρ and the Hall effect were studied as functions of time and temperature in the range of 20–600°C. A time-dependent p-type conductivity was observed at temperatures as low as 350°C. Activation energy of about Eact=1.5eV was found for the magnesium acceptor (Mg) from the isothermal measurements of ρ(t) kinetics in the range of 350–550°C. This value corresponds well to the theoretical prediction for the thermal dissociation of magnesium-hydrogen complexes (Mg–H). The annealing at temperatures higher than 600°C leads obviously to the activation of Mg acceptors, but the final resistivity of the sample is higher than the result obtained after annealing at 520°C. The ionization energy of electrically active Mg acceptor level of about EA=170meV was found from the temperature dependences of the resistivity ρ(T)." @default.
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• W2011105590 date "2006-02-01" @default.
• W2011105590 modified "2023-10-18" @default.
• W2011105590 title "Kinetics of low-temperature activation of acceptors in magnesium-doped gallium nitride epilayers grown by metal-organic vapor-phase epitaxy" @default.
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• W2011105590 doi "https://doi.org/10.1063/1.2168232" @default.
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