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• W2011108736 abstract "Positron annihilation was used to probe vacancies in Cu films deposited by Ta/SiO2/Si using electroplating and sputtering techniques. During room temperature grain growth (i.e., self-annealing) of the Cu films, two different types of vacancies (small vacancy clusters such as divacancies and large vacancy agglomerates) were introduced into grains; the formation of such defects was enhanced by residual impurities. For electroplated Cu, isochronal annealing experiments revealed further agglomeration of vacancies when annealing was done below 300 °C, and these agglomerates started to dissociate above 350 °C. The effect of impurities on the vacancy agglomerates disappeared in the defect recovery stage (≥350 °C)." @default.
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• W2011108736 date "2007-05-18" @default.
• W2011108736 modified "2023-09-26" @default.
• W2011108736 title "Impact of Residual Impurities on Annealing Properties of Vacancies in Electroplated Cu Studied Using Monoenergetic Positron Beams" @default.
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• W2011108736 doi "https://doi.org/10.1143/jjap.46.l483" @default.
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